PART |
Description |
Maker |
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM 16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
NT5DS16M16BW-6K |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|
V58C2256164SCE5BI |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
W9412FADA-75 |
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
WINBOND ELECTRONICS CORP
|
THLD12N11B70 THLD12N11B75 |
16M X 64 DDR DRAM MODULE, 7 ns, DMA200 16M X 64 DDR DRAM MODULE, 7.5 ns, DMA200
|
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM68B32DVKA EM68B32DVKA-6H EM68B32DVKA-75H |
16M x 32 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
|